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| (R) SMLVT3V3 LOW VOLTAGE TRANSILTM FEATURES UNIDIRECTIONAL TRANSIL DIODE PEAK PULSE POWER : 600 W (10/1000s) REVERSE STAND-OFF VOLTAGE = 3.3 V LOW CLAMPING FACTOR FAST RESPONSE TIME UL RECOGNIZED DESCRIPTION The SMLVT3V3 is a Transil diode designed specifically for protecting 3.3V supplied sensitive equipment against transient overvoltages. Transil diodes provide high overvoltage protection by clamping action. Their instantaneous response to transient overvoltages makes then particularly suited to protect voltage sensitive devices surb as MOS technology and low voltage supply IC's. SMB (JEDEC DO-214AA) ABSOLUTE MAXIMUM RATINGS (Tamb = 25C) Symbol PPP P IFSM Tstg Tj TL Parameter Peak pulse power dissipation (see note 1) Power dissipation on infinite heatsink Non repetitive surge peak forward current Storage temperature range Maximum junction temperature Maximum lead temperature for soldering during 10 s Tj initial = Tamb Tamb = 75C tp = 10 ms Tj initial = Tamb Value 600 5 50 - 65 to + 175 175 260 Unit W W A C C C Note 1 : For a surge greater than the maximum values, the diode will fail in short-circuit. THERMAL RESISTANCE Symbol Rth (j-l) Rth (j-a) Junction to leads Junction to ambient on printed circuit on recommended pad layout Parameter Value 20 100 Unit C/W C/W January 1998 Ed : 2 1/4 SMLVT3V3 ELECTRICAL CHARACTERISTICS (Tamb = 25C) Symbol VRM VBR VCL IRM IPP Parameter I Stand-offvoltage. Breakdown voltage. VCL VBR V RM IF Clamping voltage. Leakage current @ VRM. Peak pulse current. Voltage temperature coefficient VF I RM V T VF I PP Forward voltage drop IRM @ VRM Type max VBR @ IR min note 2 VCL @ IPP max 10/1000 s V 7.3 A 50 VCL @ IPP max 8/20 s V 10.3 A 200 T max note 3 10-4/C -5.3 C max note 4 pF 5200 A SMLVT3V3 200 V 3.3 V 4.1 mA 1 Fig. 1 : Peak pulse power dissipation versus initial junction temperature (printed circuit board). % IPP 100 10 s 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 PPP[Tj initial] PPP[Tj initial = 25C] PULSE WAVEFORM 10/1000 s 50 0 1000 s Note 2 : Pulse test : tp < 50 ms Note 3 : VBR = T * (Tamb - 25) * VBR(25C). Note 4 : VR = 0V , F = 1MHz. t Tj initial (C) 0 25 50 75 100 125 150 175 200 2/4 (R) SMLVT3V3 Fig. 2 : Peak pulse power versus exponential pulse duration (Tj initial = 25C). Fig. 3 : Clamping voltage versus peak pulse current (Tj initial = 25C). Exponentialwaveform tp = 20 s and tp = 1 ms. VCL(V) 10 tp=20 s Ppp(kW) 10.00 1.00 8 tp=1ms 0.10 tp(ms) 0.01 0.01 0.10 1.00 10.00 6 Ipp(A) 4 0.1 1.0 10.0 100.0 Fig. 4 : Capacitance versus reverse applied voltage (typical values). Fig. 5 : Peak forward voltage drop versus peak forward current (typical values). C(pF) 5000 4000 3000 2000 F=1MHz Tj=25C VR(V) 1000 1 2 3 4 5 Fig. 6 : Transient thermal impedance junction ambient versus pulse duration. Mounting on FR4 PC Board with Recommended pad layout. Fig. 7 : Relative variation of leakage current versus junction temperature. 3/4 (R) SMLVT3V3 ORDER CODE SM LVT 3V3 Surface Mount Low Voltage Transil PACKAGE MECHANICAL DATA SMB (Plastic) - Jedec DO-214AA DIMENSIONS E1 Stand-off Voltage REF. Millimeters Min. Typ. Max. Min. 2.15 0.15 Inches Typ. Max. A1 D 1.90 0.05 1.95 0.15 5.10 4.05 3.30 0.75 2.45 0.075 0.085 0.096 0.20 0.002 0.006 0.008 2.20 0.077 0.41 0.006 0.087 0.016 A2 b c E A1 A2 L b E c 5.40 4.30 3.60 1.15 5.60 0.201 0.213 0.220 4.60 0.159 0.169 0.181 3.95 0.130 0.142 0.156 1.60 0.030 0.045 0.063 E1 D L Marking: Logo,datacode,typecodeand cathodband Weight = 0.12 g FOOTPRINT DIMENSIONS (Millimeter) SMB Plastic. 2.3 1.52 2.75 1.52 Packaging : standardpackaging is in tape and reel. Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change withoutnotice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. (c) 1998 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 4/4 (R) |
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